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Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing

https://doi.org/10.1109/TED.2023.3339592

Stein, Shane R.; Khachariya, Dolar; Mecouch, Will; Mita, Seiji; Reddy, Pramod; Tweedie, James; Sierakowski, Kacper; Kamler, Grzegorz; Bockowski, Michal; Kohn, Erhard; et al (December 2023, IEEE Transactions on Electron Devices)

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Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

https://doi.org/10.35848/1882-0786/acc443

Stein, Shane R.; Khachariya, Dolar; Mita, Seiji; Breckenridge, M. Hayden; Tweedie, James; Reddy, Pramod; Sierakowski, Kacper; Kamler, Grzegorz; Boćkowski, Michał; Kohn, Erhard; et al (March 2023, Applied Physics Express)

Abstract We investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating implanted Mg. Contacts deposited on these films exhibit low rectification and high leakage current compared to contacts on as-grown films. By employing an optimized surface treatment to restore the GaN surface following UHPA, we obtain Schottky contacts with a high rectification ratio of ∼10⁹, a near-unity ideality factor of 1.03, and a barrier height of ∼0.9 eV. These characteristics enable the development of GaN junction barrier Schottky diodes employing Mg implantation and UHPA.
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Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing

https://doi.org/10.35848/1882-0786/ac8f81

Khachariya, Dolar; Stein, Shane; Mecouch, Will; Breckenridge, M. Hayden; Rathkanthiwar, Shashwat; Mita, Seiji; Moody, Baxter; Reddy, Pramod; Tweedie, James; Kirste, Ronny; et al (September 2022, Applied Physics Express)

Abstract We report a kV class, low ON-resistance, vertical GaN junction barrier Schottky (JBS) diode with selective-area p-regions formed via Mg implantation followed by high-temperature, ultra-high pressure (UHP) post-implantation activation anneal. The JBS has an ideality factor of 1.03, a turn-on voltage of 0.75 V, and a specific differential ON-resistance of 0.6 mΩ·cm 2 . The breakdown voltage of the JBS diode is 915 V, corresponding to a maximum electric field of 3.3 MV cm −1 . These results underline that high-performance GaN JBS can be realized using Mg implantation and high-temperature UHP post-activation anneal.
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